ROHM QH8KC6 Type N-Channel MOSFET, 5.5 A, 60 V Enhancement, 8-Pin TSMT-8 QH8KC6TCR

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N° de stock RS:
235-2669
Référence fabricant:
QH8KC6TCR
Fabricant:
ROHM
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Marque

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.5A

Maximum Drain Source Voltage Vds

60V

Series

QH8KC6

Package Type

TSMT-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

30mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

7.6nC

Maximum Power Dissipation Pd

1.5W

Maximum Operating Temperature

150°C

Width

0.85 mm

Length

3.1mm

Standards/Approvals

No

Height

2.9mm

Automotive Standard

No

The ROHM dual N channel MOSFET which supports 60V withstand voltage. This is designed for 24V input equipment's such as factory automation equipment's, and motors mounted on base stations. This product consists of a low on-resistance N channel MOSFET which is reduced 58%. This contributes to low power consumption of various devices.

Small surface mount package

Pb-free lead plating

RoHS compliant

Halogen Free

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