ROHM QH8KC6 Type N-Channel MOSFET, 5.5 A, 60 V Enhancement, 8-Pin TSMT-8 QH8KC6TCR
- N° de stock RS:
- 235-2670
- Référence fabricant:
- QH8KC6TCR
- Fabricant:
- ROHM
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
6,34 €
(TVA exclue)
7,67 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 20 unité(s) expédiée(s) à partir du 30 décembre 2025
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 0,634 € | 6,34 € |
| 50 - 90 | 0,62 € | 6,20 € |
| 100 - 240 | 0,503 € | 5,03 € |
| 250 - 990 | 0,487 € | 4,87 € |
| 1000 + | 0,479 € | 4,79 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 235-2670
- Référence fabricant:
- QH8KC6TCR
- Fabricant:
- ROHM
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSMT-8 | |
| Series | QH8KC6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 1.5W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.85 mm | |
| Height | 2.9mm | |
| Standards/Approvals | No | |
| Length | 3.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSMT-8 | ||
Series QH8KC6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 1.5W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Maximum Operating Temperature 150°C | ||
Width 0.85 mm | ||
Height 2.9mm | ||
Standards/Approvals No | ||
Length 3.1mm | ||
Automotive Standard No | ||
The ROHM dual N channel MOSFET which supports 60V withstand voltage. This is designed for 24V input equipment's such as factory automation equipment's, and motors mounted on base stations. This product consists of a low on-resistance N channel MOSFET which is reduced 58%. This contributes to low power consumption of various devices.
Small surface mount package
Pb-free lead plating
RoHS compliant
Halogen Free
Liens connexes
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