Infineon BSZ Type N-Channel MOSFET, 40 A, 100 V N, 8-Pin TSDSON-8 FL BSZ0803LSATMA1

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N° de stock RS:
234-6990
Référence fabricant:
BSZ0803LSATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

100V

Series

BSZ

Package Type

TSDSON-8 FL

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

20.8mΩ

Channel Mode

N

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

52W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.6nC

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.35mm

Height

1.2mm

Width

6.1 mm

Automotive Standard

No

The Infineon OptiMOS™ PD N-channel power MOSFET targets USB-PD and adapter applications. The product offers fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction and features quality products in compact, lightweight packages. It has 40A maximum continuous drain current and 100V maximum drain source voltage It is Ideal for high-frequency switching and optimized for chargers.

Logic level availability

Low on-state resistance RDS(on)

Low gate, output and reverse recovery charge

Excellent thermal behaviour

100% avalanche tested

Pb-free lead plating

Halogen-freeaccordingtoIEC61249-2-21

RoHS compliant

Available in 2 small standard packages

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