STMicroelectronics STB37N60 Type N-Channel MOSFET, 12 A, 1200 V Enhancement, 3-Pin H2PAK STH12N120K5-2
- N° de stock RS:
- 233-3041
- Référence fabricant:
- STH12N120K5-2
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
10,49 €
(TVA exclue)
12,69 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
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- 1 903 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 10,49 € |
| 10 - 99 | 9,97 € |
| 100 - 249 | 9,46 € |
| 250 - 499 | 8,99 € |
| 500 + | 8,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-3041
- Référence fabricant:
- STH12N120K5-2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | STB37N60 | |
| Package Type | H2PAK | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 690mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 44.2nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.4mm | |
| Width | 15.8 mm | |
| Height | 4.8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series STB37N60 | ||
Package Type H2PAK | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 690mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 44.2nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.4mm | ||
Width 15.8 mm | ||
Height 4.8mm | ||
Automotive Standard No | ||
The STMicroelectronics very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM (figure of merit)
Ultra-low gate charge
100% avalanche tested
Zener-protected
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