STMicroelectronics SCT025H120G3AG SiC N-Channel MOSFET, 55 A, 1200 V, 7-Pin H2PAK-7 SCT025H120G3AG

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Informations sur le stock actuellement non accessibles
N° de stock RS:
214-951
Référence fabricant:
SCT025H120G3AG
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

55 A

Maximum Drain Source Voltage

1200 V

Package Type

H2PAK-7

Series

SCT025H120G3AG

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

Pays d'origine :
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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