STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG
- N° de stock RS:
- 214-951
- Référence fabricant:
- SCT025H120G3AG
- Fabricant:
- STMicroelectronics
Sous-total (1 bobine de 1000 unités)*
23 664,00 €
(TVA exclue)
28 633,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 23,664 € | 23 664,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-951
- Référence fabricant:
- SCT025H120G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type N | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT025H120G3AG | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 2.7V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Length | 15.25mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 10.4mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N, Type N | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT025H120G3AG | ||
Package Type H2PAK-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 2.7V | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Length 15.25mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 10.4mm | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Liens connexes
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