STMicroelectronics N-Channel MOSFET, 60 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCTH60N120G2-7
- N° de stock RS:
- 233-0471
- Référence fabricant:
- SCTH60N120G2-7
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 233-0471
- Référence fabricant:
- SCTH60N120G2-7
- Fabricant:
- STMicroelectronics
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Documentation technique
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 60 A | |
| Maximum Drain Source Voltage (Vds) | 1.2 kV | |
| Channel Mode | Enhancement | |
| Pin Count | 7 | |
| Package Type | H2PAK-7 | |
| Maximum Drain Source Resistance (Rds) | 0.052 Ω | |
| Mount Type | Surface | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 60 A | ||
Maximum Drain Source Voltage (Vds) 1.2 kV | ||
Channel Mode Enhancement | ||
Pin Count 7 | ||
Package Type H2PAK-7 | ||
Maximum Drain Source Resistance (Rds) 0.052 Ω | ||
Mount Type Surface | ||
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance
Source sensing pin for increased efficiency
Liens connexes
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