onsemi NTB7D Type N-Channel MOSFET, 101 A, 150 V Enhancement, 4-Pin TO-263
- N° de stock RS:
- 230-9080
- Référence fabricant:
- NTB7D3N15MC
- Fabricant:
- onsemi
Sous-total (1 bobine de 800 unités)*
1 296,00 €
(TVA exclue)
1 568,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 + | 1,62 € | 1 296,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 230-9080
- Référence fabricant:
- NTB7D3N15MC
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 101A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | NTB7D | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 73mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 166W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Height | 15.88mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 101A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series NTB7D | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 73mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 166W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Height 15.88mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
The ON Semiconductor MOSFET - N-channel shielded gate power trench MOSFET which has drain to source voltage of 150 V.
Optimized Switching performance
Max RDS(on) = 7.3 mΩ at VGS = 10 V, ID = 62A
Industrys Lowest Qrr and softest Body-Diode for superior low noise switching
50% Lower Qrr than other MOSFET Suppliers
High efficiency with lower switching spike and EMI
Lowers Switching Noise/EMI
Improved switching FOM particularly Qgd
100% UIL Tested
No need or less snubber
Liens connexes
- onsemi NTB7D N-Channel MOSFET 150 V, 3-Pin D2PAK NTB7D3N15MC
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB110N15A
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB075N15A
- onsemi NTB01 N-Channel MOSFET 150 V, 3-Pin D2PAK NTB011N15MC
- onsemi NTB5D0N N-Channel MOSFET 150 V, 3-Pin D2PAK NTB5D0N15MC
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2572
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2552
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2532
