onsemi PowerTrench Type N-Channel MOSFET, 130 A, 150 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 166-3402
- Référence fabricant:
- FDB075N15A
- Fabricant:
- onsemi
Sous-total (1 bobine de 800 unités)*
2 264,00 €
(TVA exclue)
2 736,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 22 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 800 + | 2,83 € | 2 264,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 166-3402
- Référence fabricant:
- FDB075N15A
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 130A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-263 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.25V | |
| Typical Gate Charge Qg @ Vgs | 77nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 333W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 4.83mm | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 130A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-263 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.25V | ||
Typical Gate Charge Qg @ Vgs 77nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 333W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 4.83mm | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB075N15A
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB110N15A
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2572
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2552
- onsemi PowerTrench N-Channel MOSFET 150 V, 3-Pin D2PAK FDB2532
- onsemi PowerTrench N-Channel MOSFET 80 V, 7-Pin D2PAK FDB024N08BL7
- onsemi PowerTrench N-Channel MOSFET 60 V, 3-Pin D2PAK FDB050AN06A0
- onsemi PowerTrench N-Channel MOSFET 100 V, 3-Pin D2PAK FDB035N10A
