STMicroelectronics Single RF2L Type N-Channel MOSFET, 65 V Enhancement, 4-Pin B4E RF2L16180CB4

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N° de stock RS:
230-0085
Référence fabricant:
RF2L16180CB4
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Drain Source Voltage Vds

65V

Package Type

B4E

Series

RF2L

Mount Type

Surface

Pin Count

4

Channel Mode

Enhancement

Transistor Configuration

Single

Maximum Operating Temperature

200°C

Height

9.4mm

Standards/Approvals

RoHS

Length

27.94mm

Automotive Standard

No

Typical Power Gain

14dB

The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.

High efficiency and linear gain operations

Integrated ESD protection

Internally matched for ease of use

Optimized for Doherty applications