STMicroelectronics Single RF2L Type N-Channel MOSFET, 65 V Enhancement, 4-Pin B4E RF2L16180CB4
- N° de stock RS:
- 230-0085
- Référence fabricant:
- RF2L16180CB4
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
156,40 €
(TVA exclue)
189,24 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité |
|---|---|
| 1 - 1 | 156,40 € |
| 2 - 4 | 152,34 € |
| 5 + | 148,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 230-0085
- Référence fabricant:
- RF2L16180CB4
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Operating Frequency | 1450 MHz | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 65V | |
| Series | RF2L | |
| Package Type | B4E | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 200°C | |
| Height | 9.4mm | |
| Length | 27.94mm | |
| Width | 9.78 mm | |
| Standards/Approvals | RoHS | |
| Typical Power Gain | 14dB | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Operating Frequency 1450 MHz | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 65V | ||
Series RF2L | ||
Package Type B4E | ||
Mount Type Surface | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 200°C | ||
Height 9.4mm | ||
Length 27.94mm | ||
Width 9.78 mm | ||
Standards/Approvals RoHS | ||
Typical Power Gain 14dB | ||
Automotive Standard No | ||
The STMicroelectronics RF2L16180CB4 is 180 W, 28 V internally matched LDMOS transistor designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external matching network.
High efficiency and linear gain operations
Integrated ESD protection
Internally matched for ease of use
Optimized for Doherty applications
Liens connexes
- STMicroelectronics Single RF2L Type N-Channel MOSFET 4-Pin B4E
- STMicroelectronics Single RF2L Type N-Channel MOSFET 2-Pin B-2
- STMicroelectronics Single RF2L Type N-Channel MOSFET 2-Pin B-2 RF2L36075CF2
- STMicroelectronics Single RF3L Type N-Channel MOSFET 5-Pin LBB
- STMicroelectronics Single RF3L Type N-Channel MOSFET 5-Pin LBB RF3L05250CB4
- onsemi NTT Type N-Channel Single MOSFETs 40 V Enhancement, 8-Pin WDFN8 NTTFS4D9N04XMTAG
- STMicroelectronics PD5 Type N-Channel MOSFET 65 V Enhancement, 10-Pin PowerSO-10RF PD57018-E
- STMicroelectronics PD5 Type N-Channel MOSFET 65 V Enhancement, 10-Pin PowerSO-10RF PD57060-E