onsemi SUPERFET III Type N-Channel MOSFET, 8 A, 800 V N, 3-Pin TO-252
- N° de stock RS:
- 229-6454
- Référence fabricant:
- NTD600N80S3Z
- Fabricant:
- onsemi
Sous-total (1 bobine de 2500 unités)*
2 337,50 €
(TVA exclue)
2 827,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 25 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 + | 0,935 € | 2 337,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 229-6454
- Référence fabricant:
- NTD600N80S3Z
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-252 | |
| Series | SUPERFET III | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 600mΩ | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 15.5nC | |
| Maximum Power Dissipation Pd | 60W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 2.39 mm | |
| Height | 6.22mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-252 | ||
Series SUPERFET III | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 600mΩ | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 15.5nC | ||
Maximum Power Dissipation Pd 60W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 2.39 mm | ||
Height 6.22mm | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III series MOSFET enables to make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as laptop adapter, audio, lighting, ATX power and industrial power supplies.
Higher system reliability at low temperature operation
Lower switching loss
ESD improved capability with Zener diode
Optimized capacitance
Liens connexes
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