onsemi SUPERFET III Type N-Channel MOSFET & Diode, 13 A, 800 V Enhancement, 3-Pin TO-252

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Sous-total (1 bobine de 2500 unités)*

3 245,00 €

(TVA exclue)

3 927,50 €

(TVA incluse)

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Dernier stock RS
  • 2 500 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
la bobine*
2500 +1,298 €3 245,00 €

*Prix donné à titre indicatif

N° de stock RS:
205-2497
Référence fabricant:
NTD360N80S3Z
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET & Diode

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

SUPERFET III

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

96W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

25.3nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.55 mm

Height

2.39mm

Length

9.35mm

Automotive Standard

No

The ON Semiconductor SUPERFET III series N-channel 800V MOSFET is optimized for primary switch of fly back converter, enables lower switching losses and case temperature without sacrificing EMI performance thanks to its optimized design. In addition, internal zener diode significantly improves ESD capability. This new family enables make more efficient, compact, cooler and more robust applications because of its remarkable performance in switching power applications such as Laptop adapter, Audio, Lighting, ATX power and industrial power supplies.

Continuous Drain Current rating is 13A

Drain to source on resistance rating is 360mohm

Ultra low gate charge

Low stored energy in output capacitance

100% avalanche tested

Package type is D-PAK

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