Vishay SQSA70CENW Type N-Channel MOSFET, 18 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8W

N° de stock RS:: 228-2971
Référence fabricant:: SQSA70CENW-T1_GE3
Fabricant:: Vishay

Vishay SQSA70CENW Type N-Channel MOSFET, 18 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8W

Sous-total (1 bobine de 3000 unités)*

873,00 €

(TVA exclue)

1 056,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 11 décembre 2026

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Unité	Prix par unité	la bobine*
3000 +	0,291 €	873,00 €

*Prix donné à titre indicatif

N° de stock RS:: 228-2971
Référence fabricant:: SQSA70CENW-T1_GE3
Fabricant:: Vishay

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	150V
	Series	SQSA70CENW
	Package Type	PowerPAK 1212-8W
	Mount Type	PCB
	Pin Count	8
	Maximum Drain Source Resistance Rds	68.5mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	0.85V
	Maximum Power Dissipation Pd	62.5W
	Typical Gate Charge Qg @ Vgs	8nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	3.3mm
	Width	3.3mm
	Standards/Approvals	RoHS
	Length	3.3mm
	Automotive Standard	AEC-Q101

	Sélectionner tout
	Marque Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 150V
	Series SQSA70CENW
	Package Type PowerPAK 1212-8W
	Mount Type PCB
	Pin Count 8
	Maximum Drain Source Resistance Rds 68.5mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 0.85V
	Maximum Power Dissipation Pd 62.5W
	Typical Gate Charge Qg @ Vgs 8nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 3.3mm
	Width 3.3mm
	Standards/Approvals RoHS
	Length 3.3mm
	Automotive Standard AEC-Q101

Datasheet - SQSA70CENW-T1_GE3

Vishay SQSA70CENW Series MOSFET, 150V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SQSA70CENW-T1_GE3

This MOSFET is a high-voltage, N-channel power device designed for PCB mounting in demanding automotive and industrial control environments. It supports switching and load-control roles where elevated drain-source voltage capability and modest gate charge are required, and is built to meet automotive stress expectations and surface-mount assembly needs.

Features and Benefits:

• 150V drain-source rating enables high-voltage switching capacity • 18A continuous drain current supports substantial load handling • 68.5mΩ Rds(on) minimises conduction losses during operation • 8nC typical gate charge reduces switching energy and drive requirements • 62.5W power dissipation allows for significant thermal loading • 175°C maximum operating temperature permits elevated ambient use

Applications

• Suitable for automotive power distribution modules requiring AEC‑Q101 qualification • Ideal for DC-DC converters in industrial automation systems • Used for motor-control switching in Compact electronics assemblies • Can be used for battery management and power-path control circuits

What mounting method is required for integration?

It is supplied for PCB mounting as a surface-mount PowerPAK 1212-8W package to facilitate Compact board layouts and automated placement.

What gate-voltage limits should be observed during drive design?

The device must not be exposed to gate-source voltages beyond 20V to avoid overstress of the gate dielectric.

How does thermal capability affect cooling requirements?

With 62.5W maximum power dissipation and an elevated 175°C operating ceiling, board- and heatsinking strategies should be sized to keep junction temperatures within safe margins for continuous operation.

What environmental temperature range can it tolerate?

It operates across a wide span from -55°C up to 175°C, allowing use in both cold-start and high-heat scenarios.

Which characteristic helps reduce switching losses?

The combination of an 8nC gate charge and low on-resistance contributes to lower switching and conduction losses in high-frequency applications.