Infineon BSS123I N-Channel MOSFET, 190 mA, 100 V Depletion, 4-Pin SOT-223 BSS123IXTSA1
- N° de stock RS:
- 225-0557
- Numéro d'article Distrelec:
- 304-39-400
- Référence fabricant:
- BSS123IXTSA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 100 unités)*
9,00 €
(TVA exclue)
11,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- 200 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- Plus 3 200 unité(s) expédiée(s) à partir du 05 novembre 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 100 - 400 | 0,09 € | 9,00 € |
| 500 - 900 | 0,076 € | 7,60 € |
| 1000 - 2400 | 0,072 € | 7,20 € |
| 2500 - 4900 | 0,065 € | 6,50 € |
| 5000 + | 0,048 € | 4,80 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 225-0557
- Numéro d'article Distrelec:
- 304-39-400
- Référence fabricant:
- BSS123IXTSA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | BSS123I | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 10Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 0.63nC | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.7mm | |
| Height | 1.8mm | |
| Width | 3.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 100V | ||
Series BSS123I | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 10Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 0.63nC | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 150°C | ||
Length 6.7mm | ||
Height 1.8mm | ||
Width 3.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon BSS123I Series MOSFET, 100V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS123IXTSA1
Features and Benefits:
• 10 Ω maximum RDS(on) provides controlled on-state conduction
• 190 mA continuous drain current supports low-current loads
• 0.5 W power dissipation limits thermal stress in constrained layouts
• 0.63 nC typical gate charge enables modest switching energy demands
• ±20 V gate tolerance allows broad gate-drive flexibility
Applications
• Suitable for surface-mount power management on Compact boards
• Ideal for analogue signal attenuation or pull-down functions
• Can be used for level-shifting in mixed-voltage systems
• Used with driver stages needing depletion-mode characteristics
What ambient temperature range can it operate in?
What package should designers plan for when laying out the board?
How does its gate charge affect switching performance?
What limits the maximum continuous current in applications?
Is this intended as an automotive-grade component?
Liens connexes
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