Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252 IPD50R800CEAUMA1
- N° de stock RS:
- 222-4900
- Référence fabricant:
- IPD50R800CEAUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
15,00 €
(TVA exclue)
18,25 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 7 400 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 100 | 0,60 € | 15,00 € |
| 125 - 225 | 0,462 € | 11,55 € |
| 250 - 600 | 0,432 € | 10,80 € |
| 625 - 1225 | 0,402 € | 10,05 € |
| 1250 + | 0,372 € | 9,30 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4900
- Référence fabricant:
- IPD50R800CEAUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | IPD50R | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.83V | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.41mm | |
| Width | 6.22 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series IPD50R | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.83V | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.41mm | ||
Width 6.22 mm | ||
Automotive Standard No | ||
The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Reduced energy stored in output capacitance (E oss)
High body diode ruggedness
Reduced reverse recovery charge (Q rr )
Reduced gate charge (Q g )
Liens connexes
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