Infineon IPA60R Type N-Channel MOSFET, 18 A, 650 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 222-4886
- Référence fabricant:
- IPB60R040CFD7ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 1000 unités)*
3 360,00 €
(TVA exclue)
4 070,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 04 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 3,36 € | 3 360,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4886
- Référence fabricant:
- IPB60R040CFD7ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220 | |
| Series | IPA60R | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220 | ||
Series IPA60R | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET family it comes with reduced gate charge, improved turn-off behaviour and up to 69% reduced reverse recovery charge compared to competitors
Best-in-class hard commutation ruggedness
Highest reliability for resonant topologies
Highest efficiency with outstanding ease-of-use/performance trade-off
Enabling increased power density solutions
Liens connexes
- Infineon IPA60R Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPB60R040CFD7ATMA1
- Infineon IPA60R Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon IPA60R Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPAW60R180P7SXKSA1
- Infineon IPA60R Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-220
- Infineon IPA60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon IPA60R Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-220
- Infineon IPA60R Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-220 IPA60R099P7XKSA1
- Infineon IPA60R Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-220 IPA60R160P7XKSA1