Infineon IPA60R N-Channel MOSFET, 31 A, 1200 V Enhancement, 3-Pin TO-220 IPA60R099P7XKSA1
- N° de stock RS:
- 222-4875
- Référence fabricant:
- IPA60R099P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
26,21 €
(TVA exclue)
31,715 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 5,242 € | 26,21 € |
| 25 - 45 | 4,51 € | 22,55 € |
| 50 - 120 | 4,192 € | 20,96 € |
| 125 - 245 | 3,928 € | 19,64 € |
| 250 + | 3,62 € | 18,10 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4875
- Référence fabricant:
- IPA60R099P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-220 | |
| Series | IPA60R | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | +150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-220 | ||
Series IPA60R | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature +150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 superjunction MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor RG
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Liens connexes
- Infineon IPA60R Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-220
- Infineon IPA60R Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-220
- Infineon IPA60R Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-220 IPA60R160P7XKSA1
- Infineon IPA60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon IPA60R Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220
- Infineon IPA60R Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPA60R600P7SXKSA1
- Infineon IPA60R Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPAW60R180P7SXKSA1
- Infineon IPA60R Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-220 IPB60R040CFD7ATMA1