Infineon IMBF1 N-Channel MOSFET, 7.4 A, 1.7 kV Enhancement, 7-Pin TO-263 IMBF170R650M1XTMA1
- N° de stock RS:
- 222-4851
- Référence fabricant:
- IMBF170R650M1XTMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
11,02 €
(TVA exclue)
13,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 5,51 € | 11,02 € |
| 20 - 48 | 5,01 € | 10,02 € |
| 50 - 98 | 4,68 € | 9,36 € |
| 100 - 198 | 4,35 € | 8,70 € |
| 200 + | 4,02 € | 8,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4851
- Référence fabricant:
- IMBF170R650M1XTMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.4A | |
| Maximum Drain Source Voltage Vds | 1.7kV | |
| Series | IMBF1 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 650mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 23V | |
| Maximum Power Dissipation Pd | 88W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.4A | ||
Maximum Drain Source Voltage Vds 1.7kV | ||
Series IMBF1 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 650mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 23V | ||
Maximum Power Dissipation Pd 88W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon IMBF1 Series MOSFET, 1700V Drain Source Voltage, 7.4A Continuous Drain Current - IMBF170R650M1XTMA1
This MOSFET is a high-voltage, N-channel enhancement device intended for power switching in demanding thermal environments. It is supplied in a TO-263 surface-mount package and is designed to handle elevated voltages and moderate continuous currents while operating across a wide temperature range.
Features and Benefits:
• 1700V drain-source rating for high-voltage switching applications
• 650mΩ Rds minimises conduction losses at low to moderate currents
• 88W power dissipation supports significant heat-handling capability
• 7.4A continuous drain current for sustained power delivery
• −55°C to 175°C operation covers harsh thermal environments
• 23V gate tolerance enables robust gate-drive margins
• 650mΩ Rds minimises conduction losses at low to moderate currents
• 88W power dissipation supports significant heat-handling capability
• 7.4A continuous drain current for sustained power delivery
• −55°C to 175°C operation covers harsh thermal environments
• 23V gate tolerance enables robust gate-drive margins
Applications
• Suitable for high-voltage power converters and inverters
• Ideal for industrial motor drive front ends
• Used for switch-mode power supplies in elevated temperature settings
• Can be used for line-side switching in power distribution
• Used with heat-sinking arrangements on surface-mounted boards
• Ideal for industrial motor drive front ends
• Used for switch-mode power supplies in elevated temperature settings
• Can be used for line-side switching in power distribution
• Used with heat-sinking arrangements on surface-mounted boards
What mounting style does this component require?
It is supplied in a TO-263 package intended for surface mounting to a PCB with appropriate thermal land patterns.
What channel type and mode should designers expect?
The device uses an N-channel configuration and operates in enhancement mode for conventional gate-driven switching.
How does ambient temperature affect its suitability?
Its specified operating range from −55°C to 175°C permits use in environments with extreme cold and high thermal stress without derating beyond stated limits.
What is the maximum permitted gate-to-source voltage?
The maximum gate-source voltage is 23V, which defines the allowable gate-drive amplitude for safe operation.
Is this designed to automotive standards?
It is not specified as meeting automotive-grade standards and should not be assumed compliant with automotive qualification requirements.
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