Littelfuse LSIC1MO170T0750 Type N-Channel MOSFET, 4.5 A, 1700 V Enhancement, 7-Pin TO-263 LSIC1MO170T0750-TU
- N° de stock RS:
- 223-3051
- Référence fabricant:
- LSIC1MO170T0750-TU
- Fabricant:
- Littelfuse
Offre groupée disponible
Sous-total (1 unité)*
9,80 €
(TVA exclue)
11,86 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 30 novembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 9,80 € |
| 10 - 24 | 8,81 € |
| 25 - 99 | 8,01 € |
| 100 - 249 | 7,24 € |
| 250 + | 6,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 223-3051
- Référence fabricant:
- LSIC1MO170T0750-TU
- Fabricant:
- Littelfuse
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Littelfuse | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Series | LSIC1MO170T0750 | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 750mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 65W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11nC | |
| Forward Voltage Vf | 3.6V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.28 mm | |
| Height | 16.18mm | |
| Length | 10.18mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Littelfuse | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Series LSIC1MO170T0750 | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 750mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 65W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11nC | ||
Forward Voltage Vf 3.6V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.28 mm | ||
Height 16.18mm | ||
Length 10.18mm | ||
Automotive Standard No | ||
The Littelfuse new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175 °C.
These MOSFETs are ideal for high frequency applications in which high efficiency is desired.
Optimized for high-frequency, high-efficiency applications
Extremely low gate charge and output
capacitance
Low gate resistance for high-frequency switching
Normally-off operations at all temperatures
Ultra-low on-resistance
Optimized package with separate driver source pin
MSL 1 Rated
Liens connexes
- Littelfuse LSIC1MO170T0750 SiC N-Channel MOSFET 1700 V, 7-Pin D2PAK LSIC1MO170T0750-TU
- Wolfspeed SiC N-Channel MOSFET 1700 V, 7-Pin D2PAK C2M1000170J
- Infineon N-Channel MOSFET 1700 V, 7-Pin D2PAK IMBF170R450M1XTMA1
- Infineon IMBF1 N-Channel MOSFET 1700 V, 7-Pin D2PAK IMBF170R1K0M1XTMA1
- Infineon IMBF1 N-Channel MOSFET 1700 V, 7-Pin D2PAK IMBF170R650M1XTMA1
- onsemi SiC Power SiC N-Channel MOSFET 650 V, 7-Pin D2PAK NTBG045N065SC1
- onsemi SiC Power SiC N-Channel MOSFET 100 V, 7-Pin D2PAK NTBGS004N10G
- onsemi SiC Power SiC N-Channel MOSFET 650 V, 7-Pin D2PAK NTBG015N065SC1