Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1
- N° de stock RS:
- 222-4681
- Référence fabricant:
- IPG20N10S4L22ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
11,63 €
(TVA exclue)
14,07 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 7 850 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,163 € | 11,63 € |
| 100 - 240 | 1,106 € | 11,06 € |
| 250 - 490 | 1,081 € | 10,81 € |
| 500 - 990 | 1,01 € | 10,10 € |
| 1000 + | 0,942 € | 9,42 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4681
- Référence fabricant:
- IPG20N10S4L22ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | CoolMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 175°C | |
| Length | 5.15mm | |
| Height | 1mm | |
| Standards/Approvals | AEC-Q101 | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series CoolMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 175°C | ||
Length 5.15mm | ||
Height 1mm | ||
Standards/Approvals AEC-Q101 | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
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