Infineon Dual CoolMOS 2 Type N-Channel Power Transistor, 20 A, 100 V Enhancement, 8-Pin TDSON
- N° de stock RS:
- 222-4680
- Référence fabricant:
- IPG20N10S4L22ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
2 570,00 €
(TVA exclue)
3 110,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 5 000 unité(s) expédiée(s) à partir du 04 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,514 € | 2 570,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4680
- Référence fabricant:
- IPG20N10S4L22ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TDSON | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Maximum Power Dissipation Pd | 60W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 21nC | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 5.15mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 1mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TDSON | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Maximum Power Dissipation Pd 60W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 21nC | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 5.15mm | ||
Standards/Approvals AEC-Q101 | ||
Height 1mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Green Product (RoHS compliant)
MSL1 up to 260°C peak reflow AEC Q101 qualified
OptiMOS™ - power MOSFET for automotive applications
Liens connexes
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