Infineon Dual IPG20 2 Type N-Channel Power Transistor, 20 A, 40 V Enhancement, 8-Pin TDSON
- N° de stock RS:
- 218-3057
- Référence fabricant:
- IPG20N04S408AATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
3 625,00 €
(TVA exclue)
4 385,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 23 février 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,725 € | 3 625,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-3057
- Référence fabricant:
- IPG20N04S408AATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | IPG20 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 65W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Length | 5.15mm | |
| Standards/Approvals | RoHS | |
| Height | 1mm | |
| Width | 5.9 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series IPG20 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 65W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Length 5.15mm | ||
Standards/Approvals RoHS | ||
Height 1mm | ||
Width 5.9 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
The Infineon 20V-40V N-Channel Automotive MOSFET. The exposed pad provides excellent thermal transfer (varies by die size).
Dual N-channel Normal Level - Enhancement mode
175°C operating temperature
100% Avalanche tested
Feasible for automatic optical inspection (AOI)
Liens connexes
- Infineon Dual IPG20 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin TDSON IPG20N04S408AATMA1
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 40 V Enhancement, 8-Pin TDSON IPG20N04S4L07AATMA1
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual CoolMOS 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 55 V Enhancement, 8-Pin TDSON
- Infineon Dual OptiMOS 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON IPG20N10S4L35ATMA1
- Infineon Dual CoolMOS 2 Type N-Channel Power Transistor 100 V Enhancement, 8-Pin TDSON IPG20N10S4L22ATMA1