Infineon HEXFET N-Channel MOSFET, 171 A, 150 V Enhancement, 3-Pin TO-247 AUIRFP4568
- N° de stock RS:
- 222-4611
- Référence fabricant:
- AUIRFP4568
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 25 unités)*
304,50 €
(TVA exclue)
368,50 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 25 - 25 | 12,18 € | 304,50 € |
| 50 - 100 | 11,571 € | 289,28 € |
| 125 + | 11,084 € | 277,10 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 222-4611
- Référence fabricant:
- AUIRFP4568
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 171A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 151nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 517W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Width | 20.7mm | |
| Height | 5.31mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 171A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 151nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 517W | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Width 20.7mm | ||
Height 5.31mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Advanced Planar Technology
Dual N Channel MOSFET Low On-Resistance
Logic Level Gate Drive
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