onsemi NVTFS N-Channel MOSFET, 28.3 A, 30 V Enhancement, 8-Pin WDFN NVTFS4C02NTAG
- N° de stock RS:
- 221-6760
- Référence fabricant:
- NVTFS4C02NTAG
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
16,80 €
(TVA exclue)
20,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Dernier stock RS
- 1 430 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 1,68 € | 16,80 € |
| 100 - 240 | 1,448 € | 14,48 € |
| 250 + | 1,256 € | 12,56 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 221-6760
- Référence fabricant:
- NVTFS4C02NTAG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 28.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | WDFN | |
| Series | NVTFS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 20nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 3.15mm | |
| Width | 800μm | |
| Standards/Approvals | No | |
| Length | 3.15mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 28.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type WDFN | ||
Series NVTFS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 20nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 3.15mm | ||
Width 800μm | ||
Standards/Approvals No | ||
Length 3.15mm | ||
Automotive Standard No | ||
The ON Semiconductor Automotive power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. The wettable flank option available for enhanced optical inspection. It used AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
Low RDS(on) to minimize conduction losses
Low capacitance to minimize driver losses
Liens connexes
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