onsemi NTH4LN019N Type N-Channel MOSFET, 75 A, 650 V Enhancement, 4-Pin TO-247 NTH4LN019N65S3H
- N° de stock RS:
- 221-6708
- Référence fabricant:
- NTH4LN019N65S3H
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
25,24 €
(TVA exclue)
30,54 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 424 unité(s) expédiée(s) à partir du 04 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 25,24 € |
| 10 - 99 | 21,76 € |
| 100 + | 18,86 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 221-6708
- Référence fabricant:
- NTH4LN019N65S3H
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTH4LN019N | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 19.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 282nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 22.74mm | |
| Length | 15.8mm | |
| Standards/Approvals | These Devices are Pb-Free and are RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTH4LN019N | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 19.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 282nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 22.74mm | ||
Length 15.8mm | ||
Standards/Approvals These Devices are Pb-Free and are RoHS | ||
Automotive Standard No | ||
The ON Semiconductor SUPERFET III MOSFET has high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate.
Ultra low gate charge
low effective output capacitance 2495 pF
100% avalanche tested
Liens connexes
- onsemi NTH4LN019N Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- onsemi Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NVHL027N65S3F
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247
- onsemi FCH Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247
- onsemi FCH Type N-Channel MOSFET 650 V Enhancement, 4-Pin TO-247 FCH023N65S3L4
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NTHL027N65S3HF
- onsemi NTHL Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247 NTHL019N65S3H
- onsemi FCH029N Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247