onsemi NTH027N65S3F Type N-Channel MOSFET, 75 A, 650 V Enhancement, 3-Pin TO-247 NTH027N65S3F-F155
- N° de stock RS:
- 172-3437
- Référence fabricant:
- NTH027N65S3F-F155
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 1 unité)*
20,02 €
(TVA exclue)
24,22 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Paquet(s) | le paquet |
|---|---|
| 1 - 9 | 20,02 € |
| 10 - 99 | 17,26 € |
| 100 + | 14,96 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 172-3437
- Référence fabricant:
- NTH027N65S3F-F155
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | NTH027N65S3F | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 259nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 595W | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series NTH027N65S3F | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 259nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 595W | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Height 20.82mm | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This PIN diode is designed to realize compact and efficient designs. Two PIN diodes are incorporated in one SC-70 package. The use of dual PIN diodes can reduce both system cost and board space. This PIN diode is PPAP capable for automotive applications.
PPAP capable
Suitable for Automotive Applications
Pb-Free and Halogen Free
Environmental Consideration
Series connection of 2 elements in a small-size package
Improving the mounting efficiency greatly.
MCP3 package is pin-compatible with SC-70
Substitution from SC-70 is possible
Small Interterminal Capacitance (C = 0.23 pF typ)
Suitable for Level detector
Small Forward Series Resistance (rs = 4.5 Ω max)
Suitable for UHF band
Auto Gain Control for Automotive Radio Antenna
Automotive Antenna
Automotive Radio Tuner
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