Infineon HEXFET Type N-Channel MOSFET & Diode, 77 A, 40 V Enhancement, 3-Pin TO-252 IRFR3504ZTRPBF
- N° de stock RS:
- 220-7494
- Numéro d'article Distrelec:
- 304-39-422
- Référence fabricant:
- IRFR3504ZTRPBF
- Fabricant:
- Infineon
Sous-total (1 paquet de 10 unités)*
8,29 €
(TVA exclue)
10,03 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 11 800 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 + | 0,829 € | 8,29 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7494
- Numéro d'article Distrelec:
- 304-39-422
- Référence fabricant:
- IRFR3504ZTRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 77A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 6.22mm | |
| Length | 6.73mm | |
| Width | 2.39 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 77A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 6.22mm | ||
Length 6.73mm | ||
Width 2.39 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Strong IRFET power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Industry standard surface mount package
Silicon optimized for applications switching below <100kHz
Wide availability from distribution partners
Industry standard qualification level
Standard pinout allows for drop in replacement
High performance in low frequency applications
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET & Diode 40 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 150 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET & Diode 55 V Enhancement, 3-Pin TO-252 AUIRFR48ZTRL
- Infineon HEXFET Type N-Channel MOSFET & Diode 150 V Enhancement, 3-Pin TO-252 IRFR24N15DTRPBF
- Infineon HEXFET Type N-Channel MOSFET & Diode 30 V Enhancement, 3-Pin TO-252 IRFR3709ZTRLPBF