Infineon HEXFET Type N-Channel MOSFET & Diode, 25 A, 30 V Enhancement, 8-Pin PQFN
- N° de stock RS:
- 220-7485
- Référence fabricant:
- IRFH7932TRPBF
- Fabricant:
- Infineon
Sous-total (1 bobine de 4000 unités)*
1 380,00 €
(TVA exclue)
1 668,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 8 000 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | la bobine* |
|---|---|---|
| 4000 + | 0,345 € | 1 380,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7485
- Référence fabricant:
- IRFH7932TRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.4W | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Length | 6.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.4W | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Length 6.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
Large Source Lead for more reliable Soldering
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