Infineon CoolMOS P7 Type N-Channel MOSFET & Diode, 151 A, 650 V Enhancement, 3-Pin TO-263

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Sous-total (1 bobine de 1000 unités)*

2 079,00 €

(TVA exclue)

2 516,00 €

(TVA incluse)

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  • Expédition à partir du 06 mai 2026
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Prix par unité
la bobine*
1000 +2,079 €2 079,00 €

*Prix donné à titre indicatif

N° de stock RS:
220-7388
Référence fabricant:
IPB60R060P7ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

151A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS P7

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V Cool MOS P7 super junction MOSFET is the successor to the 600V Cool MOS P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS 7th generation platform ensure its high efficiency.

600V P7 enables excellent FOM RDS(on)xEoss and RDS(on)xQG

ESD ruggedness of ≥ 2kV (HBM class 2)

Integrated gate resistor RG

Rugged body diode

Wide portfolio in through hole and surface mount packages

Both standard grade and industrial grade parts are available

Excellent FOMs RDS(on)xQG / RDS(on)xEoss enable higher efficiency

Ease-of-use in manufacturing environments by stopping ESD failures occurring

Integrated RG reduces MOSFET oscillation sensitivity

MOSFET is suitable for both hard and resonant switching topologies such as PFC and LLC

Excellent ruggedness during hard commutation of the body diode seen in LLC topology

Suitable for a wide variety of end applications and output powers

Parts available suitable for consumer and industrial applications

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