Infineon OptiMOS Type N-Channel MOSFET & Diode, 100 A, 75 V Enhancement, 3-Pin TO-263 IPB100N08S2L07ATMA1

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Sous-total (1 paquet de 5 unités)*

18,75 €

(TVA exclue)

22,70 €

(TVA incluse)

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5 +3,75 €18,75 €

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N° de stock RS:
220-7387
Référence fabricant:
IPB100N08S2L07ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET & Diode

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

OptiMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.65mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Infineon offers a wide range of 75V-100V N-channel automotive qualified power MOSFETs using the new OptiMOS technology in various packages a RDS(on) range from 1.2mΩ up to 190mΩ by reducing CO2 emissions of passenger cars is accelerating the 48V board net adoption and therefore the 48V like starter generators (main inverter), battery main switches, DCDC converter as well as 48V auxiliaries. For this emerging market, Infineon is offering a broad portfolio of Automotive 80V and 100V MOSFETs, that are housed in different package types like TOLL (HSOF-8), TOLG (HSOG-8), TOLT (HDSOP-16), SSO8 (TDSON-8) and S308 (TSDSON-8), in order to provide solutions for different power requirements as well as different cooling concepts on electronic control unit (ECU) level. Next to the 48V applications the 80V and 100V MOSFETs are also used for example in LED lighting, fuel injection as well as in-vehicle wireless charging.

N-channel Logic Level - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C peak reflow

175°C operating temperature

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