Infineon OptiMOS Type N-Channel MOSFET & Diode, 40 A, 60 V Enhancement, 8-Pin TSDSON
- N° de stock RS:
- 220-7361
- Référence fabricant:
- BSZ100N06NSATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
1 560,00 €
(TVA exclue)
1 890,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 juin 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,312 € | 1 560,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7361
- Référence fabricant:
- BSZ100N06NSATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TSDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TSDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.
Optimized for synchronous rectification
40% lower R DS(on) than alternative devices
40% improvement of FOM over similar devices
RoHS compliant - halogen free
MSL1 rated
Highest system efficiency
Less paralleling required
Increased power density
System cost reduction
Very low voltage overshoot
Liens connexes
- Infineon OptiMOS Type N-Channel MOSFET & Diode 60 V Enhancement, 8-Pin TSDSON BSZ100N06NSATMA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON
- Infineon OptiMOS Type N-Channel MOSFET & Diode 40 V Enhancement, 8-Pin TSDSON IPZ40N04S5L4R8ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON BSZ110N06NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON BSZ067N06LS3GATMA1
- Infineon OptiMOS-TM3 Type N-Channel MOSFET 60 V Enhancement, 8-Pin TSDSON BSZ068N06NSATMA1