Infineon OptiMOS Type N-Channel MOSFET & Diode, 16 A, 300 V Enhancement, 8-Pin TDSON
- N° de stock RS:
- 220-7356
- Référence fabricant:
- BSC13DN30NSFDATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
7 540,00 €
(TVA exclue)
9 125,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 1,508 € | 7 540,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7356
- Référence fabricant:
- BSC13DN30NSFDATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 300V | |
| Series | OptiMOS | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 130mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 300V | ||
Series OptiMOS | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 130mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Height 1.2mm | ||
Length 5.35mm | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.
Improved hard commutation ruggedness
Optimized hard switching behaviour
Industrys lowest R ds(on), Q g and Q rr
RoHS compliant - halogen free
Highest system reliability
System cost reduction
Highest efficiency and power density
Easy-to-design products
Liens connexes
- Infineon OptiMOS™ Dual N-Channel MOSFET Transistor & Diode 300 V, 8-Pin SuperSO8 5 x 6 BSC13DN30NSFDATMA1
- Infineon OptiMOS™ Dual N-Channel MOSFET Transistor & Diode 100 V, 8-Pin SuperSO8 5 x 6 IPG20N10S4L35AATMA1
- Infineon OptiMOS™ Dual N-Channel MOSFET Transistor & Diode 100 V, 8-Pin SuperSO8 5 x 6 IPG20N10S4L35ATMA1
- Infineon OptiMOS™ Dual N-Channel MOSFET Transistor & Diode 40 V, 8-Pin SuperSO8 5 x 6 IPG20N04S4L07AATMA1
- Infineon OptiMOS™ Dual N-Channel MOSFET Transistor & Diode 60 V, 8-Pin SuperSO8 5 x 6 BSC028N06NSTATMA1
- Infineon OptiMOS™ 5 Dual N-Channel MOSFET Transistor & Diode 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S5L1R1ATMA1
- Infineon OptiMOS™ 3 Dual N-Channel MOSFET Transistor & Diode 80 V, 8-Pin SuperSO8 5 x 6 BSC061N08NS5ATMA1
- Infineon OptiMOS™ -T2 Dual N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 Dual IPG20N04S408AATMA1
