Infineon OptiMOS 3 Type N-Channel MOSFET & Diode, 82 A, 80 V Enhancement, 8-Pin TDSON
- N° de stock RS:
- 220-7353
- Référence fabricant:
- BSC061N08NS5ATMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 5000 unités)*
3 180,00 €
(TVA exclue)
3 850,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 5000 + | 0,636 € | 3 180,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 220-7353
- Référence fabricant:
- BSC061N08NS5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TDSON | |
| Series | OptiMOS 3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 6.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 74W | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.35mm | |
| Height | 1.2mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TDSON | ||
Series OptiMOS 3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 6.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 74W | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 5.35mm | ||
Height 1.2mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Infineon's OptiMOS N-channel power MOSFETs are developed to increase efficiency, power density and cost-effectiveness. Designed for high performance applications and optimized for high switching frequency, OptiMOS products convince with the industry's best figure of merit. The OptiMOS power MOSFET portfolio, now complemented by Strong IRFET, creates a truly powerful combination. Benefit from a perfect match of robust and excellent price/performance of Strong IRFET MOSFETs and best-in-class technology of OptiMOS MOSFETs. Both product families answer to the highest quality standards and performance demands. The joint portfolio, covering voltages from 12V up to 300V MOSFETs, can address a broad range of needs from low to high switching frequencies such as SMPS, battery powered applications, motor control and drives, inverters, and computing.
Optimized for high performance SMPS ,e.g. sync.rec.
100%avalanchetested
Superior thermal resistance
N-channel
QualifiedaccordingtoJEDEC1)for target applications
Pb-free lead plating; RoHS compliant
Halogen-freeaccordingtoIEC61249-2-21
Liens connexes
- Infineon OptiMOS 3 Type N-Channel MOSFET & Diode 80 V Enhancement, 8-Pin TDSON BSC061N08NS5ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS-TM5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC047N08NS3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC123N08NS3GATMA1