Infineon OptiMOS-TM5 N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1

N° de stock RS:: 222-4619
Référence fabricant:: BSC072N08NS5ATMA1
Fabricant:: Infineon

Infineon OptiMOS-TM5 N-Channel MOSFET, 74 A, 80 V Enhancement, 8-Pin TDSON BSC072N08NS5ATMA1

Sous-total (1 bobine de 5000 unités)*

3 565,00 €

(TVA exclue)

4 315,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 11 octobre 2027

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Unité	Prix par unité	la bobine*
5000 +	0,713 €	3 565,00 €

*Prix donné à titre indicatif

N° de stock RS:: 222-4619
Référence fabricant:: BSC072N08NS5ATMA1
Fabricant:: Infineon

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	74A
	Maximum Drain Source Voltage Vds	80V
	Package Type	TDSON
	Series	OptiMOS-TM5
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	7.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	69W
	Typical Gate Charge Qg @ Vgs	24nC
	Forward Voltage Vf	1.1V
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Height	1.2mm
	Length	5.35mm
	Width	6.1mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 74A
	Maximum Drain Source Voltage Vds 80V
	Package Type TDSON
	Series OptiMOS-TM5
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 7.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 69W
	Typical Gate Charge Qg @ Vgs 24nC
	Forward Voltage Vf 1.1V
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Height 1.2mm
	Length 5.35mm
	Width 6.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - BSC072N08NS5ATMA1

Infineon OptiMOS-TM5 Series MOSFET, 80V Maximum Drain Source Voltage, 74A Maximum Continuous Drain Current - BSC072N08NS5ATMA1

This MOSFET is a high-current N-channel semiconductor designed for switching and power conversion in demanding thermal environments. It operates across a wide temperature span and accepts gate voltages up to 20 V, making it suitable for applications requiring robust gate drive and substantial continuous drain current while mounted as a Compact surface device.

Features and Benefits:

• 80 V drain rating enables higher-voltage switching applications
• 74 A continuous current supports heavy-load power stages
• 7.2 mΩ Rds(on) reduces conduction losses during operation
• 69 W power dissipation allows sustained thermal loading
• 24 nC typical gate charge for predictable switching behaviour
• 8-pin TDSON surface package provides Compact PCB real-estate savings

Applications

• Suitable for high-current motor drive stages
• Ideal for DC-DC converter output stages
• Used with power distribution modules in server racks
• Can be used for battery management and charging systems
• Used for synchronous rectification in power supplies

What thermal extremes can it tolerate during operation?

It is rated to operate from −55 °C up to 150 °C.

What gate drive voltage range is permissible for switching control?

The gate may be driven up to 20 V to switch the device.

How does the package support automated assembly?

It is supplied in an 8-pin TDSON package intended for surface mounting.

What is the typical switching charge to consider in gate drivers?

Designers should account for a typical total gate charge of 24 nC when selecting a driver.