Infineon CoolMOS Type N-Channel MOSFET, 4 A, 800 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 219-6008
- Référence fabricant:
- IPP80R1K4P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
55,25 €
(TVA exclue)
66,85 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 28 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,105 € | 55,25 € |
| 100 - 200 | 0,95 € | 47,50 € |
| 250 - 450 | 0,895 € | 44,75 € |
| 500 - 1200 | 0,829 € | 41,45 € |
| 1250 + | 0,785 € | 39,25 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-6008
- Référence fabricant:
- IPP80R1K4P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 140mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Power Dissipation Pd | 32W | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.36mm | |
| Height | 4.57mm | |
| Width | 15.95mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 140mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Power Dissipation Pd 32W | ||
Maximum Operating Temperature 150°C | ||
Length 10.36mm | ||
Height 4.57mm | ||
Width 15.95mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
Liens connexes
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