Infineon CoolMOS Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 219-6010
- Référence fabricant:
- IPP80R360P7XKSA1
- Fabricant:
- Infineon
Sous-total (1 tube de 50 unités)*
44,95 €
(TVA exclue)
54,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 550 unité(s) expédiée(s) à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 + | 0,899 € | 44,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 219-6010
- Référence fabricant:
- IPP80R360P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | CoolMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 360mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 84W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Width | 15.95mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series CoolMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 360mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 84W | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Width 15.95mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.
Easy to drive and to design-in
Better production yield by reducing ESD related failures
Less production issues and reduced field returns
Easy to select right parts for fine tuning of designs
Liens connexes
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPP80R360P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPA80R360P7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPP80R1K4P7XKSA1
- Infineon CoolMOS Type N-Channel MOSFET 800 V Enhancement, 3-Pin TO-220 IPAN80R280P7XKSA1
- Infineon CoolMOS CE Type N-Channel MOSFET 550 V Enhancement, 3-Pin TO-220