Infineon CoolMOS P7 Type N-Channel MOSFET, 13 A, 800 V Enhancement, 3-Pin TO-220

Offre groupée disponible

Sous-total (1 tube de 50 unités)*

77,30 €

(TVA exclue)

93,55 €

(TVA incluse)

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  • 300 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le tube*
50 - 501,546 €77,30 €
100 - 2001,267 €63,35 €
250 - 4501,19 €59,50 €
500 - 9501,144 €57,20 €
1000 +1,097 €54,85 €

*Prix donné à titre indicatif

N° de stock RS:
219-5984
Référence fabricant:
IPA80R360P7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS P7

Package Type

TO-220

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

360mΩ

Channel Mode

Enhancement

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V CoolMOS P7 superjunction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical flyback applications. It also enables higher power density designs through lower switching losses and better DPAK R DS(on) products. Overall, it helps customers save BOM cost and reduce assembly effort.

Easy to drive and to design-in

Better production yield by reducing ESD related failures

Less production issues and reduced field returns

Easy to select right parts for fine tuning of designs

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