Infineon OptiMOS N-Channel MOSFET, 119 A, 40 V N, 8-Pin TDSON BSC026N04LSATMA1

N° de stock RS:: 218-2975
Référence fabricant:: BSC026N04LSATMA1
Fabricant:: Infineon

Infineon OptiMOS N-Channel MOSFET, 119 A, 40 V N, 8-Pin TDSON BSC026N04LSATMA1

Sous-total (1 paquet de 15 unités)*

8,24 €

(TVA exclue)

9,96 €

(TVA incluse)

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Unité	Prix par unité	le paquet*
15 +	0,549 €	8,24 €

*Prix donné à titre indicatif

N° de stock RS:: 218-2975
Référence fabricant:: BSC026N04LSATMA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	N
	Maximum Continuous Drain Current Id	119A
	Maximum Drain Source Voltage Vds	40V
	Package Type	TDSON
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.6mΩ
	Channel Mode	N
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Power Dissipation Pd	63W
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20V
	Maximum Operating Temperature	150°C
	Length	5.35mm
	Standards/Approvals	No
	Height	1.2mm
	Width	6.1mm
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type N
	Maximum Continuous Drain Current Id 119A
	Maximum Drain Source Voltage Vds 40V
	Package Type TDSON
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.6mΩ
	Channel Mode N
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Power Dissipation Pd 63W
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20V
	Maximum Operating Temperature 150°C
	Length 5.35mm
	Standards/Approvals No
	Height 1.2mm
	Width 6.1mm
	Automotive Standard No

Datasheet - BSC026N04LSATMA1

Infineon OptiMOS Series MOSFET, 40V Maximum Drain Source Voltage, 119A Maximum Continuous Drain Current - BSC026N04LSATMA1

This MOSFET is a high-current N-channel transistor designed for power switching in surface-mounted systems, providing controlled conduction for DC-DC conversion and similar power-management tasks within wide operating conditions.

Features and Benefits:

• Maximum drain-source voltage supports 40 V system operation
• Very low on-resistance reduces conduction losses at 2.6 mΩ
• Continuous drain current rating enables 119 A sustained load handling
• Typical gate charge of 45 nC minimises switching energy and delay
• Power dissipation capability allows 63 W thermal handling during operation
• Gate-source withstand up to 20 V for robust drive margin

Applications

• Suitable for high-current DC-DC converters in power supplies
• Ideal for switching stages in automotive power modules
• Used for motor-driver half-bridges requiring low conduction loss
• Can be used for high-efficiency synchronous rectification
• Suitable for Compact surface-mount power assemblies

What temperature range can it reliably operate within?

It is specified to function between −55 °C and 150 °C for extended thermal margins.

What package and mounting method are used for Compact designs?

It is supplied in an 8-pin TDSON package intended for surface mounting.

How does its forward voltage affect power-stage design?

The forward voltage of 1 V should be considered when calculating conduction losses and selection of gate-drive levels.

What channel and conduction mode does the device use?

It employs an N-type channel operating in enhancement mode for standard MOSFET switching behaviour.