Infineon OptiMOS Type N-Channel MOSFET, 119 A, 40 V N, 8-Pin TDSON BSC026N04LSATMA1
- N° de stock RS:
- 218-2975
- Référence fabricant:
- BSC026N04LSATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 15 unités)*
8,235 €
(TVA exclue)
9,96 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 4 620 unité(s) expédiée(s) à partir du 16 mars 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 15 + | 0,549 € | 8,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-2975
- Référence fabricant:
- BSC026N04LSATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 119A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TDSON | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.6mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 63W | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.1 mm | |
| Standards/Approvals | No | |
| Height | 1.2mm | |
| Length | 5.35mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 119A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TDSON | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.6mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 63W | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Width 6.1 mm | ||
Standards/Approvals No | ||
Height 1.2mm | ||
Length 5.35mm | ||
Automotive Standard No | ||
The Infineon OptiMOS™ series 40V N-channel power MOSFET. The OptiMOS™ 40V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops. In addition these devices can be used for a broad range of industrial applications including motor control and fast switching DC-DC converter.
100% avalanche tested
Superior thermal resistance
Pb-free lead plating
Liens connexes
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