Infineon CoolMOS C7 Type N-Channel MOSFET, 50 A, 600 V Enhancement, 3-Pin TO-220 IPP60R040C7XKSA1
- N° de stock RS:
- 217-2557
- Référence fabricant:
- IPP60R040C7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
7,86 €
(TVA exclue)
9,51 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 450 unité(s) expédiée(s) à partir du 09 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 7,86 € |
| 10 - 24 | 7,22 € |
| 25 - 49 | 6,76 € |
| 50 - 99 | 6,28 € |
| 100 + | 5,81 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2557
- Référence fabricant:
- IPP60R040C7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS C7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 107nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 227W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.57 mm | |
| Height | 29.95mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS C7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 107nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 227W | ||
Maximum Operating Temperature 150°C | ||
Width 4.57 mm | ||
Height 29.95mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™ C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Liens connexes
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