Infineon CoolMOS C7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 3-Pin TO-220 IPP60R180C7XKSA1
- N° de stock RS:
- 214-9095
- Référence fabricant:
- IPP60R180C7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
17,10 €
(TVA exclue)
20,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 270 unité(s) expédiée(s) à partir du 31 août 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 3,42 € | 17,10 € |
| 25 - 45 | 2,60 € | 13,00 € |
| 50 - 120 | 2,432 € | 12,16 € |
| 125 - 245 | 2,254 € | 11,27 € |
| 250 + | 2,078 € | 10,39 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 214-9095
- Référence fabricant:
- IPP60R180C7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS C7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Standards/Approvals | No | |
| Width | 4.57mm | |
| Length | 10.36mm | |
| Height | 9.45mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS C7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Standards/Approvals No | ||
Width 4.57mm | ||
Length 10.36mm | ||
Height 9.45mm | ||
Automotive Standard No | ||
The Infineon CoolMOS Series is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. These are Suitable for hard and soft switching. Suitable for applications such as server, telecom and solar.
Qualified for industrial grade applications according to JEDEC
Suitable for hard and soft switching
Liens connexes
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