Infineon CoolMOS Type N-Channel MOSFET, 8.4 A, 600 V N, 3-Pin TO-220 IPAN60R800CEXKSA1
- N° de stock RS:
- 217-2499
- Référence fabricant:
- IPAN60R800CEXKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 20 unités)*
12,64 €
(TVA exclue)
15,30 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 06 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 - 80 | 0,632 € | 12,64 € |
| 100 - 180 | 0,487 € | 9,74 € |
| 200 - 480 | 0,455 € | 9,10 € |
| 500 - 980 | 0,424 € | 8,48 € |
| 1000 + | 0,392 € | 7,84 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2499
- Référence fabricant:
- IPAN60R800CEXKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8.4A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | N | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 20.5nC | |
| Maximum Power Dissipation Pd | 82W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 16.1mm | |
| Height | 29.87mm | |
| Width | 4.8 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8.4A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode N | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 20.5nC | ||
Maximum Power Dissipation Pd 82W | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 16.1mm | ||
Height 29.87mm | ||
Width 4.8 mm | ||
Automotive Standard No | ||
The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.
Narrow margins between typical and max R DS(on)
Reduced energy stored in output capacitance (E oss)
Good body diode ruggedness and reduced reverse recovery charge (Q rr)
Optimized integrated R g
Liens connexes
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