Infineon CoolMOS Type N-Channel MOSFET, 8.4 A, 600 V N, 3-Pin TO-220 IPAN60R800CEXKSA1

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N° de stock RS:
217-2499
Référence fabricant:
IPAN60R800CEXKSA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

8.4A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220

Series

CoolMOS

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

800mΩ

Channel Mode

N

Typical Gate Charge Qg @ Vgs

20.5nC

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

82W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

29.87mm

Length

16.1mm

Width

4.8 mm

Automotive Standard

No

The Infineon CoolMOS™ CE is suitable for hard and soft switching applications and as modern superjunction, it delivers low conduction and switching losses improving efficiency and ultimately reduces power consumption. 600V, 650V and 700V CoolMOS™ CE combine the optimal R DS(on) and package offering suitable in low power chargers for mobile phones and tablets.

Narrow margins between typical and max R DS(on)

Reduced energy stored in output capacitance (E oss)

Good body diode ruggedness and reduced reverse recovery charge (Q rr)

Optimized integrated R g

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