Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 24 A, 150 V Enhancement, 8-Pin PDFN56 TSM650N15CR
- N° de stock RS:
- 216-9716
- Référence fabricant:
- TSM650N15CR
- Fabricant:
- Taiwan Semiconductor
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
41,53 €
(TVA exclue)
50,25 €
(TVA incluse)
Ajouter 20 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 1 590 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 4,153 € | 41,53 € |
| 50 - 90 | 4,07 € | 40,70 € |
| 100 - 240 | 3,733 € | 37,33 € |
| 250 - 990 | 3,662 € | 36,62 € |
| 1000 + | 3,397 € | 33,97 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-9716
- Référence fabricant:
- TSM650N15CR
- Fabricant:
- Taiwan Semiconductor
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 24A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 96W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Height | 1.1mm | |
| Width | 5.1 mm | |
| Standards/Approvals | RoHS 2011/65/EU and WEEE 2002/96/EC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 24A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 96W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Height 1.1mm | ||
Width 5.1 mm | ||
Standards/Approvals RoHS 2011/65/EU and WEEE 2002/96/EC | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Liens connexes
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