Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 28 A, 60 V Enhancement, 8-Pin PDFN56 TSM280NB06LCR

Voir l’ensemble des MOSFETs
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N° de stock RS:
216-9709
Référence fabricant:
TSM280NB06LCR
Fabricant:
Taiwan Semiconductor
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Marque

Taiwan Semiconductor

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

28A

Maximum Drain Source Voltage Vds

60V

Package Type

PDFN56

Series

TSM025

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

18nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

56W

Maximum Operating Temperature

175°C

Height

1.1mm

Width

5.1 mm

Standards/Approvals

IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC

Length

6.1mm

Automotive Standard

No

The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested

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