Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 30 A, 60 V Enhancement, 8-Pin PDFN56 TSM250NB06DCR
- N° de stock RS:
- 216-9706
- Référence fabricant:
- TSM250NB06DCR
- Fabricant:
- Taiwan Semiconductor
Offre groupée disponible
Sous-total (1 paquet de 25 unités)*
48,375 €
(TVA exclue)
58,525 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 6 650 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 25 - 25 | 1,935 € | 48,38 € |
| 50 - 75 | 1,898 € | 47,45 € |
| 100 - 225 | 1,742 € | 43,55 € |
| 250 - 975 | 1,709 € | 42,73 € |
| 1000 + | 1,585 € | 39,63 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-9706
- Référence fabricant:
- TSM250NB06DCR
- Fabricant:
- Taiwan Semiconductor
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TSM025 | |
| Package Type | PDFN56 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 48W | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.1 mm | |
| Standards/Approvals | IEC 61249-2-21, RoHS | |
| Height | 1.1mm | |
| Length | 6.1mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TSM025 | ||
Package Type PDFN56 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 48W | ||
Maximum Operating Temperature 150°C | ||
Width 5.1 mm | ||
Standards/Approvals IEC 61249-2-21, RoHS | ||
Height 1.1mm | ||
Length 6.1mm | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
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