Taiwan Semiconductor TSM025 Type N-Channel MOSFET, 104 A, 60 V Enhancement, 8-Pin PDFN56 TSM045NB06CR
- N° de stock RS:
- 216-9659
- Référence fabricant:
- TSM045NB06CR
- Fabricant:
- Taiwan Semiconductor
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
30,07 €
(TVA exclue)
36,38 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En voie de retrait du marché
- 970 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 40 | 3,007 € | 30,07 € |
| 50 - 90 | 2,947 € | 29,47 € |
| 100 - 240 | 2,704 € | 27,04 € |
| 250 - 990 | 2,65 € | 26,50 € |
| 1000 + | 2,46 € | 24,60 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 216-9659
- Référence fabricant:
- TSM045NB06CR
- Fabricant:
- Taiwan Semiconductor
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 104A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PDFN56 | |
| Series | TSM025 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 104nC | |
| Maximum Power Dissipation Pd | 136W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 104A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PDFN56 | ||
Series TSM025 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 104nC | ||
Maximum Power Dissipation Pd 136W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 61249-2-21, RoHS 2011/65/EU, WEEE 2002/96/EC | ||
Automotive Standard No | ||
The Taiwan semiconductor single N channel power MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.
Low RDS(ON) to minimize conductive losses Low gate charge for fast power switching 100% UIS and Rg tested
Liens connexes
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