Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220
- N° de stock RS:
- 215-2538
- Référence fabricant:
- IPP60R099P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 50 unités)*
97,20 €
(TVA exclue)
117,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 150 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 50 - 50 | 1,944 € | 97,20 € |
| 100 - 200 | 1,788 € | 89,40 € |
| 250 + | 1,691 € | 84,55 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2538
- Référence fabricant:
- IPP60R099P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | CoolMOS P7 | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 99mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 117W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 45nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.57mm | |
| Length | 10.36mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series CoolMOS P7 | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 99mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 117W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 45nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.57mm | ||
Length 10.36mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon CoolMOS™ P7 Series MOSFET, 31A Continuous Drain Current, 600V Drain Source Voltage - IPP60R099P7XKSA1
This MOSFET is a high-performance power component designed specifically for high-voltage applications. With a maximum continuous drain current of 31A and a maximum drain-source voltage of 600V, it is housed in a TO-220 package, making it suitable for through-hole mounting. Its exceptional specifications make it ideal for advanced electronic designs across various industries.
Features & Benefits
• Suitable for both hard and soft switching use
• Significantly reduces switching and conduction losses
• Excellent robust body diode for hard commutation
• High ESD protection exceeding 2kV for reliable performance
• Enhancement mode configuration simplifies circuit design
Applications
• Ideal for PFC (Power Factor Correction) stages
• Used in hard-switching PWM (Pulse Width Modulation)
• Applicable in resonant switching stages for various electronics
• Suitable for adapters and LCD/PDP TVs
• Utilised in lighting solutions, server equipment, and telecom systems
What is the significance of the low RDS(on) value in this device?
A low RDS(on) value of 0.099 ohm minimises conduction losses, enhancing the efficiency of power conversion in applications where heat generation is a concern.
How does its working temperature range impact its performance?
Operating effectively between -55°C and +150°C, it ensures reliability and stability even in extreme conditions, making it suitable for diverse environments.
Can it be used in parallel configurations?
Yes, for parallel configurations, the use of ferrite beads on the gate or separate totem poles is generally recommended to prevent oscillation and ensure stable operation.
Liens connexes
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IPP60R360P7XKSA1