Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

N° de stock RS:: 215-2539
Référence fabricant:: IPP60R099P7XKSA1
Fabricant:: Infineon

Infineon CoolMOS P7 Type N-Channel MOSFET, 31 A, 600 V Enhancement, 3-Pin TO-220 IPP60R099P7XKSA1

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

20,95 €

(TVA exclue)

25,35 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

Plus 435 unité(s) expédiée(s) à partir du 05 janvier 2026

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Unité	Prix par unité	le paquet*
5 - 20	4,19 €	20,95 €
25 - 45	3,52 €	17,60 €
50 - 120	3,31 €	16,55 €
125 - 245	3,058 €	15,29 €
250 +	2,852 €	14,26 €

*Prix donné à titre indicatif

N° de stock RS:: 215-2539
Référence fabricant:: IPP60R099P7XKSA1
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-220
	Series	CoolMOS P7
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	99mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	45nC
	Forward Voltage Vf	0.9V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	117W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	10.36mm
	Height	4.57mm
	Standards/Approvals	No
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-220
	Series CoolMOS P7
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 99mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 45nC
	Forward Voltage Vf 0.9V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 117W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 10.36mm
	Height 4.57mm
	Standards/Approvals No
	Automotive Standard No

Infineon CoolMOS™ P7 Series MOSFET, 31A Continuous Drain Current, 600V Drain Source Voltage - IPP60R099P7XKSA1

This MOSFET is a high-performance power component designed specifically for high-voltage applications. With a maximum continuous drain current of 31A and a maximum drain-source voltage of 600V, it is housed in a TO-220 package, making it suitable for through-hole mounting. Its exceptional specifications make it ideal for advanced electronic designs across various industries.

Features & Benefits

• Suitable for both hard and soft switching use

• Significantly reduces switching and conduction losses

• Excellent robust body diode for hard commutation

• High ESD protection exceeding 2kV for reliable performance

• Enhancement mode configuration simplifies circuit design

Applications

• Ideal for PFC (Power Factor Correction) stages

• Used in hard-switching PWM (Pulse Width Modulation)

• Applicable in resonant switching stages for various electronics

• Suitable for adapters and LCD/PDP TVs

• Utilised in lighting solutions, server equipment, and telecom systems

What is the significance of the low RDS(on) value in this device?

A low RDS(on) value of 0.099 ohm minimises conduction losses, enhancing the efficiency of power conversion in applications where heat generation is a concern.

How does its working temperature range impact its performance?

Operating effectively between -55°C and +150°C, it ensures reliability and stability even in extreme conditions, making it suitable for diverse environments.

Can it be used in parallel configurations?

Yes, for parallel configurations, the use of ferrite beads on the gate or separate totem poles is generally recommended to prevent oscillation and ensure stable operation.