Infineon CoolMOS P7 Type N-Channel MOSFET, 37 A, 600 V Enhancement, 3-Pin TO-220 IPP60R080P7XKSA1
- N° de stock RS:
- 217-2559
- Référence fabricant:
- IPP60R080P7XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
24,36 €
(TVA exclue)
29,475 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 135 unité(s) expédiée(s) à partir du 20 juillet 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 5 | 4,872 € | 24,36 € |
| 10 - 20 | 4,38 € | 21,90 € |
| 25 - 45 | 4,088 € | 20,44 € |
| 50 - 120 | 3,80 € | 19,00 € |
| 125 + | 3,508 € | 17,54 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 217-2559
- Référence fabricant:
- IPP60R080P7XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | CoolMOS P7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 129W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.95mm | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series CoolMOS P7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 129W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 29.95mm | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Automotive Standard No | ||
The Infineon 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
600V P7 enables excellent FOM R DS(on)xE oss DS(on)xQ G
ESD ruggedness of ≥ 2kV (HBM class 2)
Integrated gate resistor R G
Rugged body diode
Wide portfolio in through hole and surface mount packages
Both standard grade and industrial grade parts are available
Liens connexes
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
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- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- Infineon CoolMOS P7 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
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