Infineon CoolMOS Type N-Channel MOSFET, 1.9 A, 800 V Enhancement, 3-Pin SOT-223 IPN80R3K3P7ATMA1

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Sous-total (1 paquet de 25 unités)*

11,45 €

(TVA exclue)

13,85 €

(TVA incluse)

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  • Plus 2 850 unité(s) expédiée(s) à partir du 19 janvier 2026
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Unité
Prix par unité
le paquet*
25 +0,458 €11,45 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
215-2532
Référence fabricant:
IPN80R3K3P7ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

1.9A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS

Package Type

SOT-223

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.3Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

5.8nC

Forward Voltage Vf

0.9V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

6.1W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Infineon 800V Cool MOS™ P7 super junction MOSFET series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on fly back applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. This new product family offers up to 0.6% efficiency gain and 2°C to 8°C lower MOSFET temperature compared to its predecessor as well as to competitor parts tested in typical fly back applications. It also enables higher power density designs through lower switching losses and better DPAK RDS(on) products.

Integrated Zener diode ESD protection up to Class 2 (HBM)

Best-in-class quality and reliability

Fully optimized portfolio

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