Infineon HEXFET Type N-Channel MOSFET, 522 A, 40 V Enhancement, 7-Pin TO-263 AUIRFS8409-7TRL
- N° de stock RS:
- 215-2454
- Référence fabricant:
- AUIRFS8409-7TRL
- Fabricant:
- Infineon
Sous-total (1 paquet de 5 unités)*
23,81 €
(TVA exclue)
28,81 €
(TVA incluse)
Ajouter 20 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 795 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 4,762 € | 23,81 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 215-2454
- Référence fabricant:
- AUIRFS8409-7TRL
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 522A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | HEXFET | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 0.75mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 305nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 522A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series HEXFET | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 0.75mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 305nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Automotive DirectFET® Power MOSFET has 60V maximum drain source voltage with 68A maximum continuous drain current in a D2-Pak 7pin package. specifically designed for automotive application, this HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance par silicon area. Additional features of these designs are 175°C junction operating temperature, fast switching speed and improve repetitive avalanche rating. This feature combined to make this product an extremely efficient and reliable device for use in automotive and wide variety of other applications.
Advanced Process Technology
New Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
Liens connexes
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263 AUIRFS4115-7TRL
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263 AUIRFSA8409-7TRL
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 6-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 6-Pin TO-263 IRFS7430TRL7PP
- Infineon HEXFET Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 150 V Enhancement, 7-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 7-Pin TO-263-7 AUIRLS3036-7P