Infineon HEXFET Type N-Channel MOSFET, 105 A, 150 V Enhancement, 7-Pin TO-263

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N° de stock RS:
214-8958
Référence fabricant:
AUIRFS4115-7TRL
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

105A

Maximum Drain Source Voltage Vds

150V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

11.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

380W

Typical Gate Charge Qg @ Vgs

73nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

9.65 mm

Standards/Approvals

No

Length

10.54mm

Height

4.83mm

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced Process Technology

Ultra Low On-Resistance

Automotive Qualified

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